Integrated Circuits (ICs)

ADP3611MNR2G

Obsolete

ON Semiconductor

DUAL BOOTSTRAPPED, HIGH VOLTAGE MOSFET DRIVER WITH OUTPUT DISABLE

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Integrated Circuits (ICs)

ADP3611MNR2G

Obsolete

ON Semiconductor

DUAL BOOTSTRAPPED, HIGH VOLTAGE MOSFET DRIVER WITH OUTPUT DISABLE

Deep-Dive with AI

DocumentsDatasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	ADP3611MNR2G

Channel Type	Synchronous
Driven Configuration	Half-Bridge
Gate Type	N-Channel MOSFET
Input Type	Non-Inverting, Inverting
Logic Voltage - VIL, VIH	0.8 V, 2 V
Mounting Type	Surface Mount
Number of Drivers	2
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-10 °C
Package / Case	8-VFDFN Exposed Pad
Rise / Fall Time (Typ) [custom]	15 ns
Rise / Fall Time (Typ) [custom]	20 ns
Supplier Device Package	8-DFN (2x2)
Voltage - Supply [Max]	5.5 V
Voltage - Supply [Min]	4.6 V

ADP3611 Series

Dual Bootstrapped, High Voltage MOSFET Driver with Output Disable

Part	Channel Type	Package / Case	Driven Configuration	Voltage - Supply [Min]	Voltage - Supply [Max]	Input Type	Gate Type	Operating Temperature [Min]	Operating Temperature [Max]	Logic Voltage - VIL, VIH	Number of Drivers	Mounting Type	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Supplier Device Package	Package / Case [x]	Package / Case [x]
ON Semiconductor ADP3611MNR2G	Synchronous	8-VFDFN Exposed Pad	Half-Bridge	4.6 V	5.5 V	Inverting Non-Inverting	N-Channel MOSFET	-10 °C	150 °C	0.8 V 2 V	2	Surface Mount	15 ns	20 ns	8-DFN (2x2)
ON Semiconductor ADP3611JRMZ-REEL	Synchronous	10-MSOP 10-TFSOP	Half-Bridge	4.6 V	5.5 V	Inverting Non-Inverting	N-Channel MOSFET	-10 °C	150 °C	0.8 V 2 V	2	Surface Mount	15 ns	20 ns	10-MSOP	3 mm	0.118 in

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

ADP3611 Series

The ADP3611 is a dual MOSFET driver optimized for driving two N-Channel switching MOSFETs in nonisolated synchronous buck power converters used to power CPUs in portable computers. The driver impedances have been chosen to provide optimum performance in multiphase regulators at up to 25 A per phase. The high-side driver can be bootstrapped relative to the switch node of the buck converter and is designed to accommodate the high voltage slew rate associated with floating high-side gate drivers. An internal synchronous MOSFET is used to replace an external bootstrap Schottky diode. This allows a larger high side gate voltage for increased efficiency.

Documents

Technical documentation and resources