Discrete Semiconductor Products

S5K-M3/57T

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DIODE GEN PURP 800V 5A DO214AB

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Discrete Semiconductor Products

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DIODE GEN PURP 800V 5A DO214AB

Technical Specifications

Parameters and characteristics for this part

Specification	S5K-M3/57T

Capacitance @ Vr, F	40 pF
Current - Average Rectified (Io)	5 A
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	SMC, DO-214AB
Reverse Recovery Time (trr)	2.5 µs
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	DO-214AB (SMC)
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	800 V
Voltage - Forward (Vf) (Max) @ If	1.15 V

Part	Speed	Speed	Voltage - Forward (Vf) (Max) @ If	Mounting Type	Qualification	Package / Case	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Reverse Leakage @ Vr	Supplier Device Package	Capacitance @ Vr, F	Technology	Reverse Recovery Time (trr)	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Grade	Current - Average Rectified (Io)
Vishay General Semiconductor - Diodes Division S5KHE3_A/I	Standard Recovery >500ns	200 mA	1.15 V	Surface Mount	AEC-Q101	DO-214AB SMC	800 V	10 µA	DO-214AB (SMC)	40 pF	Standard	2.5 µs	150 °C	-55 °C	Automotive	5 A
Vishay General Semiconductor - Diodes Division S5K-M3/57T	Standard Recovery >500ns	200 mA	1.15 V	Surface Mount		DO-214AB SMC	800 V	10 µA	DO-214AB (SMC)	40 pF	Standard	2.5 µs	150 °C	-55 °C		5 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 800 V 5A Surface Mount DO-214AB (SMC)

Technical documentation and resources