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MBRD6100CT-TP
Discrete Semiconductor Products

MCU15N10B-TP

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MBRD6100CT-TP
Discrete Semiconductor Products

MCU15N10B-TP

Active

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationMCU15N10B-TP
Current - Continuous Drain (Id) @ 25°C15 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]12 nC
Input Capacitance (Ciss) (Max) @ Vds1100 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max) [Max]41 W
Rds On (Max) @ Id, Vgs90 mOhm
Supplier Device PackageTO-252 (DPAK)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 2500$ 0.21

Description

General part information

MCU15 Series

N-Channel 100 V 15A (Tc) 41W Surface Mount TO-252 (DPAK)

Documents

Technical documentation and resources