Discrete Semiconductor Products

FDS6676AS

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ON Semiconductor

30V N-CHANNEL POWERTRENCH® SYNCFET™ 14.5A, 6.0MΩ

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DocumentsPackage Drawing-751EB-SOIC8 Datasheet +1

Discrete Semiconductor Products

FDS6676AS

Active

ON Semiconductor

30V N-CHANNEL POWERTRENCH® SYNCFET™ 14.5A, 6.0MΩ

Deep-Dive with AI

DocumentsPackage Drawing-751EB-SOIC8 Datasheet +1

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	FDS6676AS

Current - Continuous Drain (Id) @ 25°C	14.5 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	63 nC
Input Capacitance (Ciss) (Max) @ Vds	2510 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power Dissipation (Max)	2.5 W
Rds On (Max) @ Id, Vgs	6 mOhm
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

FDS6676AS Series

N-Channel Logic Level PowerTrenchTM MOSFET 30V, 6.5A 38mΩ

Part	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	FET Type	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Package / Case [y]	Package / Case [x]	Vgs (Max)	Drain to Source Voltage (Vdss)	Technology	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs [Max]
ON Semiconductor FDS6694	3 V	-55 °C	175 ░C	12 A	N-Channel	Surface Mount	1293 pF	8-SOIC	3.9 mm	0.154 in	20 V	30 V	MOSFET (Metal Oxide)	8-SOIC	4.5 V 10 V	2.5 W	11 mOhm
ON Semiconductor FDS6675A	3 V	-55 °C	175 ░C	11 A	P-Channel	Surface Mount	2330 pF	8-SOIC	3.9 mm	0.154 in	25 V	30 V	MOSFET (Metal Oxide)	8-SOIC	4.5 V 10 V	2.5 W	13 mOhm	34 nC
ON Semiconductor FDS6690A_NBBM015A	3 V	-55 °C	150 °C	11 A	N-Channel	Surface Mount	1205 pF	8-SOIC	3.9 mm	0.154 in	20 V	30 V	MOSFET (Metal Oxide)	8-SOIC	4.5 V 10 V	2.5 W	12.5 mOhm
ON Semiconductor FDS6688	3 V	-55 °C	175 ░C		N-Channel	Surface Mount	3888 pF	8-SOIC	3.9 mm	0.154 in	20 V	30 V	MOSFET (Metal Oxide)	8-SOIC	4.5 V 10 V	2.5 W	6 mOhm	56 nC
ON Semiconductor FDS6682	3 V	-55 °C	150 °C	14 A	N-Channel	Surface Mount	2310 pF	8-SOIC	3.9 mm	0.154 in	20 V	30 V	MOSFET (Metal Oxide)	8-SOIC	4.5 V 10 V	1 W	7.5 mOhm		31 nC
ON Semiconductor FDS6673AZ	3 V	-55 °C	175 ░C	14.5 A	P-Channel	Surface Mount	4480 pF	8-SOIC	3.9 mm	0.154 in	25 V	30 V	MOSFET (Metal Oxide)	8-SOIC	4.5 V 10 V	2.5 W	7.2 mOhm	118 nC
ON Semiconductor FDS6688S	3 V	-55 °C	175 ░C		N-Channel	Surface Mount	3290 pF	8-SOIC	3.9 mm	0.154 in	20 V	30 V	MOSFET (Metal Oxide)	8-SOIC	4.5 V 10 V	2.5 W	6 mOhm	78 nC
ON Semiconductor FDS6685	3 V	-55 °C	175 ░C	8.8 A	P-Channel	Surface Mount	1604 pF	8-SOIC	3.9 mm	0.154 in	25 V	30 V	MOSFET (Metal Oxide)	8-SOIC	4.5 V 10 V	2.5 W		24 nC		20 mOhm
ON Semiconductor FDS6680	3 V	-55 °C	150 °C	11.5 A	N-Channel	Surface Mount	2070 pF	8-SOIC	3.9 mm	0.154 in	20 V	30 V	MOSFET (Metal Oxide)	8-SOIC	4.5 V 10 V	2.5 W	10 mOhm	27 nC
ON Semiconductor FDS6676AS	3 V	-55 °C	150 °C	14.5 A	N-Channel	Surface Mount	2510 pF	8-SOIC	3.9 mm	0.154 in	20 V	30 V	MOSFET (Metal Oxide)	8-SOIC	4.5 V 10 V	2.5 W	6 mOhm	63 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	567	$ 0.53
		567	$ 0.53

Description

General part information

FDS6676AS Series

This P-Channel Logic Level MOSFET is produced using an advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for notebook computer applications: load switching and power management, battery charging circuits, and DC/DC conversion.