Discrete Semiconductor Products

IRFL9014TRPBF-BE3

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MOSFET P-CH 60V 1.8A SOT223

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Discrete Semiconductor Products

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MOSFET P-CH 60V 1.8A SOT223

Technical Specifications

Parameters and characteristics for this part

Specification	IRFL9014TRPBF-BE3

Current - Continuous Drain (Id) @ 25°C	1.8 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	12 nC
Input Capacitance (Ciss) (Max) @ Vds	270 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-261AA, TO-261-4
Power Dissipation (Max)	3.1 W, 2 W
Rds On (Max) @ Id, Vgs	500 mOhm
Supplier Device Package	SOT-223
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Supplier Device Package	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Technology	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Package / Case
Vishay General Semiconductor - Diodes Division IRFL9014TRPBF-BE3	SOT-223	Surface Mount	10 V	20 V	2 W 3.1 W	500 mOhm	MOSFET (Metal Oxide)	P-Channel	-55 °C	150 °C	1.8 A	4 V	12 nC	60 V	270 pF	TO-261-4 TO-261AA
Vishay General Semiconductor - Diodes Division IRFL9014PBF	SOT-223	Surface Mount	10 V	20 V	2 W 3.1 W	500 mOhm	MOSFET (Metal Oxide)	P-Channel	-55 °C	150 °C	1.8 A	4 V	12 nC	60 V	270 pF	TO-261-4 TO-261AA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 60 V 1.8A (Tc) 2W (Ta), 3.1W (Tc) Surface Mount SOT-223

Technical documentation and resources