Discrete Semiconductor Products

EMT1T2R

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PNP+PNP, SOT-563, GENERAL PURPOSE AMPLIFICATION TRANSISTOR

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DocumentsNotes for Temperature Measurement Using Forward Voltage of PN Junction Anti-Whisker formation - Transistors +35

Discrete Semiconductor Products

EMT1T2R

Active

Rohm Semiconductor

PNP+PNP, SOT-563, GENERAL PURPOSE AMPLIFICATION TRANSISTOR

Deep-Dive with AI

DocumentsNotes for Temperature Measurement Using Forward Voltage of PN Junction Anti-Whisker formation - Transistors +35

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	EMT1T2R

Current - Collector (Ic) (Max) [Max]	150 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	120
Frequency - Transition	140 MHz
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-563, SOT-666
Supplier Device Package	EMT6
Transistor Type	2 PNP (Dual)
Vce Saturation (Max) @ Ib, Ic	500 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

EMT1 Series

PNP+PNP, SOT-563, General Purpose Amplification Transistor

Part	Current - Collector (Ic) (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Transistor Type	Mounting Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Supplier Device Package	Operating Temperature	Frequency - Transition	Current - Collector Cutoff (Max) [Max]	Package / Case
Rohm Semiconductor EMT1T2R	150 mA	120	2 PNP (Dual)	Surface Mount	50 V	500 mV	EMT6	150 °C	140 MHz	100 nA	SOT-563 SOT-666

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	19836	$ 0.53

Description

General part information

EMT1 Series

Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillators, driver ICs and so forth.