Specification	NSBA124XF3T5G

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	500 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	80
Mounting Type	Surface Mount
Package / Case	SOT-1123
Power - Max [Max]	254 mW
Resistor - Base (R1)	22 kOhms
Resistor - Emitter Base (R2)	47000 Ohms
Resistors Included	R1 and R2
Supplier Device Package	SOT-1123
Transistor Type	PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic	250 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

NSBA124EDP6 Series

Dual PNP Bipolar Digital Transistor (BRT)

Part	Resistor - Emitter Base (R2)	Package / Case	Vce Saturation (Max) @ Ib, Ic	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Mounting Type	Supplier Device Package	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Transistor Type	Current - Collector Cutoff (Max) [Max]	Current - Collector (Ic) (Max) [Max]	Resistor - Base (R1)	Resistors Included
ON Semiconductor NSBA124XDXV6T1	47000 Ohms	SOT-563 SOT-666	250 mV	500 mW	50 V	Surface Mount	SOT-563	80	2 PNP - Pre-Biased (Dual)	500 nA	100 mA	22 kOhms
ON Semiconductor NSBA124EDP6T5G	22 kOhms	SOT-963	250 mV	408 mW	50 V	Surface Mount	SOT-963	60 hFE	2 PNP - Pre-Biased (Dual)	500 nA	100 mA	22 kOhms
ON Semiconductor NSBA124XF3T5G	47000 Ohms	SOT-1123	250 mV	254 mW	50 V	Surface Mount	SOT-1123	80	PNP - Pre-Biased	500 nA	100 mA	22 kOhms	R1 and R2
ON Semiconductor NSBA124EDXV6T1	22 kOhms	SOT-563 SOT-666	250 mV	500 mW	50 V	Surface Mount	SOT-563	60 hFE	2 PNP - Pre-Biased (Dual)	500 nA	100 mA	22 kOhms

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tape & Reel (TR)	8000	$ 0.06
		16000	$ 0.06
		24000	$ 0.05
		40000	$ 0.05
		56000	$ 0.05
		80000	$ 0.05
		200000	$ 0.04
Newark	Each (Supplied on Cut Tape)	5000	$ 0.06
ON Semiconductor	N/A	1	$ 0.05

Description

General part information

NSBA124EDP6 Series

This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.

Documents

Technical documentation and resources

Datasheet

Package Drawing-524AA-SOT−1123 0.80x0.60x0.37, 0.35P

Package Drawing