Specification	MBR830MFST1G

Current - Average Rectified (Io)	8 A
Current - Reverse Leakage @ Vr	200 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	8-PowerTDFN, 5 Leads
Speed	200 mA, 500 ns
Supplier Device Package	5-DFN (5x6)
Supplier Device Package	8-SOFL
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	30 V
Voltage - Forward (Vf) (Max) @ If	700 mV

MBR830MFS Series

8 A, 30 V Schottky Diode in SO-8FL

Part	Supplier Device Package	Supplier Device Package	Voltage - Forward (Vf) (Max) @ If	Current - Reverse Leakage @ Vr	Speed	Package / Case	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - DC Reverse (Vr) (Max) [Max]	Mounting Type	Current - Average Rectified (Io)	Technology
ON Semiconductor MBR830MFST3G	5-DFN (5x6)	8-SOFL	700 mV	200 µA	200 mA 500 ns	8-PowerTDFN 5 Leads	150 °C	-40 °C	30 V	Surface Mount	8 A	Schottky
ON Semiconductor MBR830MFST1G	5-DFN (5x6)	8-SOFL	700 mV	200 µA	200 mA 500 ns	8-PowerTDFN 5 Leads	150 °C	-40 °C	30 V	Surface Mount	8 A	Schottky

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

8 A, 30 V Schottky Diode in SO-8FL

Technical documentation and resources