FDC6020C_F077

Obsolete

MOSFET N/P-CH 20V 6-SSOP

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Discrete Semiconductor Products

Obsolete

MOSFET N/P-CH 20V 6-SSOP

Technical Specifications

Parameters and characteristics for this part

Specification	FDC6020C_F077

Configuration	N and P-Channel
Current - Continuous Drain (Id) @ 25°C	4.2 A, 5.9 A
Drain to Source Voltage (Vdss)	20 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	8 nC
Input Capacitance (Ciss) (Max) @ Vds	677 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-SSOT Flat-lead, SuperSOT™-6 FLMP
Power - Max [Max]	1.2 W
Rds On (Max) @ Id, Vgs	27 mOhm
Supplier Device Package	SuperSOT™-6 FLMP
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.5 V

Part	Power - Max [Max]	Configuration	Package / Case	Technology	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	FET Feature	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	Mounting Type
ON Semiconductor FDC6020C_F077	1.2 W	N and P-Channel	6-SSOT Flat-lead SuperSOT™-6 FLMP	MOSFET (Metal Oxide)	1.5 V	4.2 A 5.9 A	Logic Level Gate	27 mOhm	677 pF	SuperSOT™-6 FLMP	20 V	-55 °C	150 °C	8 nC	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Mosfet Array 20V 5.9A, 4.2A 1.2W Surface Mount SuperSOT™-6 FLMP

Technical documentation and resources