Discrete Semiconductor Products

S4D40120H

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DIODE SIC 1.2KV 128A TO247AC

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Discrete Semiconductor Products

Active

DIODE SIC 1.2KV 128A TO247AC

Technical Specifications

Parameters and characteristics for this part

Specification	S4D40120H

Capacitance @ Vr, F	3227 pF
Current - Average Rectified (Io)	128 A
Current - Reverse Leakage @ Vr	30 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	TO-247-2
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	TO-247AC
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If	1.8 V

Part	Package / Case	Voltage - DC Reverse (Vr) (Max) [Max]	Supplier Device Package	Capacitance @ Vr, F	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Average Rectified (Io)	Technology	Voltage - Forward (Vf) (Max) @ If	Current - Reverse Leakage @ Vr	Speed	Mounting Type	Reverse Recovery Time (trr)
SMC Diode Solutions S4D40120H	TO-247-2	1.2 kV	TO-247AC	3227 pF	175 ░C	-55 C	128 A	SiC (Silicon Carbide) Schottky	1.8 V	30 µA	No Recovery Time	Through Hole	0 ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 1200 V 128A Through Hole TO-247AC

Technical documentation and resources