Specification	RHRP860-F085

Current - Average Rectified (Io)	8 A
Current - Reverse Leakage @ Vr	100 µA
Grade	Automotive
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-65 C
Package / Case	TO-220-2
Qualification	AEC-Q101
Reverse Recovery Time (trr)	35 ns
Speed	200 mA, 500 ns
Supplier Device Package	TO-220-2
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V

RHRP860_F085 Series

600V, 8A, 2.1V, TO-220 (2-lead)<BR>Hyperfast Diode

Part	Reverse Recovery Time (trr)	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Package / Case	Voltage - DC Reverse (Vr) (Max) [Max]	Mounting Type	Current - Average Rectified (Io)	Current - Reverse Leakage @ Vr	Speed	Grade	Technology	Supplier Device Package	Qualification
ON Semiconductor RHRP860-F085	35 ns	175 ░C	-65 C	TO-220-2	600 V	Through Hole	8 A	100 µA	200 mA 500 ns	Automotive	Standard	TO-220-2	AEC-Q101

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

RHRP860_F085 Series

The RHRP840 and RHRP860 are hyperfast diodes with soft recovery characteristics (trr<<30ns). They have half the recovery time of ultrafast diodes and are silicon nitride passivated ion-implanted epitaxial planar construction. These devices are intended for use as freewheeling/clamping diodes and rectifiers in a variety of switching power supplies and other power switching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors. Formerly developmental type TA49059.