Specification	MBRF2545CT

Current - Average Rectified (Io) (per Diode)	12.5 A
Current - Reverse Leakage @ Vr	200 µA
Diode Configuration	1 Pair Common Cathode
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-65 C
Package / Case	TO-220-3 Full Pack
Speed	200 mA, 500 ns
Supplier Device Package	TO-220FP
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	45 V
Voltage - Forward (Vf) (Max) @ If	700 mV

MBRF2545CT Series

Schottky Barrier Rectifier, 25 A, 45 V

Part	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Reverse Leakage @ Vr	Diode Configuration	Mounting Type	Package / Case	Technology	Supplier Device Package	Speed	Current - Average Rectified (Io) (per Diode)	Voltage - Forward (Vf) (Max) @ If	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]
ON Semiconductor MBRF2545CT	45 V	200 µA	1 Pair Common Cathode	Through Hole	TO-220-3 Full Pack	Schottky	TO-220FP	200 mA 500 ns	12.5 A	700 mV	175 ░C	-65 C
ON Semiconductor MBRF2545CTG	45 V	200 µA	1 Pair Common Cathode	Through Hole	TO-220-3 Full Pack	Schottky	TO-220FP	200 mA 500 ns	12.5 A	700 mV	175 ░C	-65 C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

MBRF2545CT Series

The Schottky Rectifier employs the Schottky Barrier principle in a large metal to silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. It is ideally suited for use in low voltage, high frequency switching power supplies, free wheeling diodes and polarity protection diodes.