Discrete Semiconductor Products

SI7317DN-T1-GE3

LTB

MOSFET P-CH 150V 2.8A PPAK1212-8

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Discrete Semiconductor Products

LTB

MOSFET P-CH 150V 2.8A PPAK1212-8

Technical Specifications

Parameters and characteristics for this part

Specification	SI7317DN-T1-GE3

Current - Continuous Drain (Id) @ 25°C	2.8 A
Drain to Source Voltage (Vdss)	150 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	9.8 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	365 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® 1212-8
Power Dissipation (Max)	19.8 W, 3.2 W
Rds On (Max) @ Id, Vgs [Max]	1.2 Ohm
Supplier Device Package	PowerPAK® 1212-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.5 V

Part	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Package / Case	Rds On (Max) @ Id, Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	FET Type	Technology	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C
Vishay General Semiconductor - Diodes Division SI7317DN-T1-GE3	PowerPAK® 1212-8	9.8 nC	150 V	4.5 V	PowerPAK® 1212-8	1.2 Ohm	-55 °C	150 °C	3.2 W 19.8 W	6 V 10 V	Surface Mount	365 pF	P-Channel	MOSFET (Metal Oxide)	30 V	2.8 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 150 V 2.8A (Tc) 3.2W (Ta), 19.8W (Tc) Surface Mount PowerPAK® 1212-8

Technical documentation and resources