Discrete Semiconductor Products

BUK7M8R0-40EX

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BUK7M8R0-40E - N-CHANNEL 40 V, 8 MΩ STANDARD LEVEL MOSFET IN LFPAK33@EN-US

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Discrete Semiconductor Products

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BUK7M8R0-40E - N-CHANNEL 40 V, 8 MΩ STANDARD LEVEL MOSFET IN LFPAK33@EN-US

Technical Specifications

Parameters and characteristics for this part

Specification	BUK7M8R0-40EX

Current - Continuous Drain (Id) @ 25°C	69 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	23.8 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	1567 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Power Dissipation (Max)	75 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	8 mOhm
Supplier Device Package	LFPAK33
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Part	Vgs(th) (Max) @ Id	FET Type	Technology	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [x]	Mounting Type	Rds On (Max) @ Id, Vgs	Supplier Device Package	Power Dissipation (Max)	Qualification	Grade	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max) [Max]	Vgs (Max) [Min]	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)
Freescale Semiconductor - NXP BUK7M8R5-40HX	3.6 V	N-Channel	MOSFET (Metal Oxide)	40 V	20 nC	Surface Mount	8.5 mOhm	LFPAK33	59 W	AEC-Q101	Automotive	10 V	1309 pF	-55 °C	175 ░C	20 V	-10 V
Freescale Semiconductor - NXP BUK7M8R0-40EX		N-Channel	MOSFET (Metal Oxide)	40 V		Surface Mount	8 mOhm	LFPAK33	75 W	AEC-Q101	Automotive	10 V	1567 pF	-55 °C	175 ░C			23.8 nC	69 A	20 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 40 V 69A (Tc) 75W (Tc) Surface Mount LFPAK33

Technical documentation and resources