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RD3P175SNTL1

Discrete Semiconductor Products

RD3P175SNTL1

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Rohm Semiconductor

MOSFET, N-CH, 100V, 17.5A, 150DEG C, 20W

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Search across all available documentation for this part.

DocumentsTechnical Data Sheet EN Precautions When Measuring the Rear of the Package with a Thermocouple +40

RD3P175SNTL1

Discrete Semiconductor Products

RD3P175SNTL1

Active

Rohm Semiconductor

MOSFET, N-CH, 100V, 17.5A, 150DEG C, 20W

Deep-Dive with AI

DocumentsTechnical Data Sheet EN Precautions When Measuring the Rear of the Package with a Thermocouple +40

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	RD3P175SNTL1

Current - Continuous Drain (Id) @ 25°C	17.5 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	4 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	24 nC
Input Capacitance (Ciss) (Max) @ Vds	950 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-252-3, SC-63, DPAK (2 Leads + Tab)
Power Dissipation (Max)	20 W
Rds On (Max) @ Id, Vgs	105 mOhm
Supplier Device Package	TO-252
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	6890	$ 1.71
Mouser	N/A	1	$ 1.62
		10	$ 1.12
		100	$ 0.86
		500	$ 0.71
		1000	$ 0.66
		2500	$ 0.61
Newark	Each (Supplied on Cut Tape)	1	$ 1.68
		10	$ 1.27
		25	$ 1.15
		50	$ 1.03
		100	$ 0.92
		250	$ 0.83
		500	$ 0.74
		1000	$ 0.68

Description

General part information

RD3P175SN Series

RD3P175SN is a Power MOSFET with Low on - resistance., suitable for Switching.

Documents

Technical documentation and resources

Technical Data Sheet EN

Precautions When Measuring the Rear of the Package with a Thermocouple

How to Create Symbols for PSpice Models

Reliability Test Result

Manufacturing Data

What is a Thermal Model? (Transistor)

RD3P175SN Data Sheet

Types and Features of Transistors

Application Note

MOSFET Gate Resistor Setting for Motor Driving

Technical Article

Impedance Characteristics of Bypass Capacitor

Schematic Design & Verification

Compliance of the RoHS directive

Environmental Data

Basics of Thermal Resistance and Heat Dissipation

Two-Resistor Model for Thermal Simulation

MOSFET Gate Drive Current Setting for Motor Driving

Technical Article

Report of SVHC under REACH Regulation

Environmental Data

Notes for Calculating Power Consumption:Static Operation

TO-252_TL1 Taping Information

Package Information

Inner Structure

Package Information

Package Dimensions

Package Information

Temperature derating method for Safe Operating Area (SOA)

Schematic Design & Verification

Part Explanation

Application Note

Example of Heat Dissipation Design for TO Packages: Effect of Heat Dissipation Materials

About Export Regulations

Export Information

About Flammability of Materials

Environmental Data

PCB Layout Thermal Design Guide

Calculation of Power Dissipation in Switching Circuit

Schematic Design & Verification

How to Use LTspice® Models: Tips for Improving Convergence

Schematic Design & Verification

Overview of ROHM's Simulation Models(for ICs and Discrete Semiconductors)

Technical Article

What Is Thermal Design

Notes for Temperature Measurement Using Forward Voltage of PN Junction

Importance of Probe Calibration When Measuring Power: Deskew

Schematic Design & Verification

Constitution Materials List

Environmental Data

Notes for Temperature Measurement Using Thermocouples

List of Transistor Package Thermal Resistance

Measurement Method and Usage of Thermal Resistance RthJC

Anti-Whisker formation - Transistors

Package Information

Condition of Soldering / Land Pattern Reference

Package Information

Moisture Sensitivity Level - Transistors

Package Information

How to Use LTspice® Models

Schematic Design & Verification

48V power supply, 3 hall sensor support, Three-phase brushless DC motor drive Reference Design

Reference Design

RD3P175SN ESD Data

Characteristics Data

Method for Monitoring Switching Waveform

Schematic Design & Verification

Method for Calculating Junction Temperature from Transient Thermal Resistance Data

RD3P175SN Series

Nch 100V 17.5A Power MOSFET

Part	Rds On (Max) @ Id, Vgs	Technology	FET Type	Power Dissipation (Max)	Supplier Device Package	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Drain to Source Voltage (Vdss)	Mounting Type	Operating Temperature [Max]	Operating Temperature [Min]	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]
Rohm Semiconductor RD3P175SNTL1	105 mOhm	MOSFET (Metal Oxide)	N-Channel	20 W	TO-252	2.5 V	950 pF	DPAK (2 Leads + Tab) SC-63 TO-252-3	17.5 A	20 V	100 V	Surface Mount	150 °C	-55 °C	24 nC	4 V	10 V