Discrete Semiconductor Products

MMBF170LT1G

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POWER MOSFET, N CHANNEL, 60 V, 500 MA, 5 OHM, SOT-23 (TO-236), 3 PINS, SURFACE MOUNT

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Discrete Semiconductor Products

Active

POWER MOSFET, N CHANNEL, 60 V, 500 MA, 5 OHM, SOT-23 (TO-236), 3 PINS, SURFACE MOUNT

Technical Specifications

Parameters and characteristics for this part

Specification	MMBF170LT1G

Current - Continuous Drain (Id) @ 25°C	500 mA
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds [Max]	60 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)	225 mW
Rds On (Max) @ Id, Vgs	5 Ohm
Supplier Device Package	SOT-23-3 (TO-236)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

Single N-Channel Power MOSFET 60V 500mA 5Ω

Part	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Rds On (Max) @ Id, Vgs	Vgs (Max)	Package / Case	FET Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Technology	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Drain to Source Voltage (Vdss)	Power Dissipation (Max)
ON Semiconductor MMBF170LT1	3 V	-55 °C	150 °C	10 V	SOT-23-3 (TO-236)	5 Ohm	20 V	SC-59 SOT-23-3 TO-236-3	N-Channel	60 pF	MOSFET (Metal Oxide)	500 mA	Surface Mount	60 V	225 mW
ON Semiconductor MMBF170LT1G	3 V	-55 °C	150 °C	10 V	SOT-23-3 (TO-236)	5 Ohm	20 V	SC-59 SOT-23-3 TO-236-3	N-Channel	60 pF	MOSFET (Metal Oxide)	500 mA	Surface Mount	60 V	225 mW

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General part information

Power MOSFET500 mA, 60 V, N−Channel SOT−23

Technical documentation and resources