Technical Specifications
Parameters and characteristics for this part
| Specification | GE12090CDA3 |
|---|---|
| Channel Count | 2 |
| Configuration | N-Channel |
| Configuration - Features | Half Bridge |
| Current - Continuous Drain (Id) | 875 A |
| Drain to Source Voltage (Vdss) | 1200 V |
| Input Capacitance (Ciss) (Max) | 58.6 nF, 58.6 nF |
| Mounting Type | Chassis Mount |
| Operating Temperature | 175 °C |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | Module |
| Package Name | Module |
| Power - Max | 2350 W |
| Qualification | AEC-Q101 |
| Rds On (Max) | 2.19 mOhm |
| Technology | Silicon Carbide (SiC) |
| Vgs(th) (Max) | 4.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | Updated |
|---|---|---|---|---|
| Digikey | Bulk | 1 | $ 4290.00 | <4d |
CAD
3D models and CAD resources for this part
Description
General part information
GE12090CDA3
Mosfet Array 1200V (1.2kV) 875A 2350W Chassis Mount Module
Documents
Technical documentation and resources