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Technical Specifications
Parameters and characteristics for this part
| Specification | GE12090CDA3 |
|---|---|
| Configuration | 2 N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 875 A |
| Drain to Source Voltage (Vdss) | 1.2 kV |
| Drain to Source Voltage (Vdss) | 1200 V |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 58.6 nF |
| Mounting Type | Chassis Mount |
| Operating Temperature | 175 °C |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | Module |
| Power - Max [Max] | 2350 W |
| Qualification | AEC-Q101 |
| Rds On (Max) @ Id, Vgs [Max] | 2.19 mOhm |
| Supplier Device Package | Module |
| Technology | Silicon Carbide (SiC) |
| Vgs(th) (Max) @ Id | 4.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 1 | $ 2164.00 | |
| 10 | $ 2039.00 | |||
| N/A | 4 | $ 4290.00 | ||
Description
General part information
GE12090CDA3
Mosfet Array 1200V (1.2kV) 875A 2350W Chassis Mount Module
Documents
Technical documentation and resources