Discrete Semiconductor Products

MBR3560R

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DIODE SCHOTTKY REV 60V 35A DO4

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Discrete Semiconductor Products

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DIODE SCHOTTKY REV 60V 35A DO4

Technical Specifications

Parameters and characteristics for this part

Specification	MBR3560R

Current - Average Rectified (Io)	35 A
Current - Reverse Leakage @ Vr	1.5 mA
Mounting Type	Chassis, Stud Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	DO-203AA, Stud, DO-4
Speed	500 ns, 200 mA
Supplier Device Package	DO-4
Technology	Reverse Polarity, Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	60 V
Voltage - Forward (Vf) (Max) @ If [Max]	750 mV

Part	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Supplier Device Package	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If [Max]	Package / Case	Technology	Speed	Mounting Type	Current - Average Rectified (Io)
GeneSiC Semiconductor MBR3560R	-55 °C	150 °C	DO-4	60 V	1.5 mA	750 mV	DO-203AA DO-4 Stud	Reverse Polarity Schottky	200 mA 500 ns	Chassis Stud Mount	35 A

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General part information

Diode 60 V 35A Chassis, Stud Mount DO-4

Technical documentation and resources