Discrete Semiconductor Products

VS-FB190SA10

Obsolete

MOSFET N-CH 100V 190A SOT227

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 100V 190A SOT227

Technical Specifications

Parameters and characteristics for this part

Specification	VS-FB190SA10

Current - Continuous Drain (Id) @ 25°C	190 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds [Max]	10700 pF
Mounting Type	Chassis Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-227-4, miniBLOC
Power Dissipation (Max)	568 W
Rds On (Max) @ Id, Vgs	6.5 mOhm
Supplier Device Package	SOT-227
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.35 V

Part	Operating Temperature [Max]	Operating Temperature [Min]	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs (Max)	Technology	Supplier Device Package	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Package / Case	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	FET Type	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)
Vishay General Semiconductor - Diodes Division VS-FB190SA10	150 °C	-55 °C	568 W	10700 pF	20 V	MOSFET (Metal Oxide)	SOT-227	Chassis Mount	190 A	SOT-227-4 miniBLOC	6.5 mOhm	100 V	N-Channel	4.35 V	10 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

N-Channel 100 V 190A (Tj) 568W (Tc) Chassis Mount SOT-227

Technical documentation and resources