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IRG4RC10UTRPBF
Discrete Semiconductor Products

FQB6N70TM

Obsolete
ON Semiconductor

MOSFET N-CH 700V 6.2A D2PAK

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IRG4RC10UTRPBF
Discrete Semiconductor Products

FQB6N70TM

Obsolete
ON Semiconductor

MOSFET N-CH 700V 6.2A D2PAK

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationFQB6N70TM
Current - Continuous Drain (Id) @ 25°C6.2 A
Drain to Source Voltage (Vdss)700 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]40 nC
Input Capacitance (Ciss) (Max) @ Vds1400 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)142 W, 3.13 W
Rds On (Max) @ Id, Vgs1.5 Ohm
Supplier Device PackageTO-263 (D2PAK)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 131$ 2.30
131$ 2.30

Description

General part information

FQB6 Series

N-Channel 700 V 6.2A (Tc) 3.13W (Ta), 142W (Tc) Surface Mount TO-263 (D2PAK)

Documents

Technical documentation and resources