Discrete Semiconductor Products

BUK9Y11-80EX

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MOSFET N-CH 80V 84A LFPAK56

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Discrete Semiconductor Products

Active

MOSFET N-CH 80V 84A LFPAK56

Technical Specifications

Parameters and characteristics for this part

Specification	BUK9Y11-80EX

Current - Continuous Drain (Id) @ 25°C	84 A
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On)	5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	44.2 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds [Max]	6506 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-669, SC-100
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	10 mOhm
Supplier Device Package	Power-SO8, LFPAK56
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V
Vgs(th) (Max) @ Id	2.1 V

Part	Input Capacitance (Ciss) (Max) @ Vds	Technology	Vgs (Max)	Package / Case	Mounting Type	Grade	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Qualification	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	Supplier Device Package	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]
Freescale Semiconductor - NXP BUK9Y11-30B,115	1614 pF	MOSFET (Metal Oxide)	15 V	SC-100 SOT-669	Surface Mount	Automotive	N-Channel	-55 °C	175 ░C	AEC-Q101	30 V	59 A	4.5 V 10 V	2 V	16.5 nC	75 W	LFPAK56 Power-SO8
Freescale Semiconductor - NXP BUK9Y11-80EX		MOSFET (Metal Oxide)	10 V	SC-100 SOT-669	Surface Mount	Automotive	N-Channel	-55 °C	175 ░C	AEC-Q101	80 V	84 A	5 V	2.1 V	44.2 nC		LFPAK56 Power-SO8	10 mOhm	6506 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 80 V 84A (Tc) 194W (Tc) Surface Mount LFPAK56, Power-SO8

Technical documentation and resources