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8-PQFN
Discrete Semiconductor Products

FDMS015N04B

LTB
ON Semiconductor

N-CHANNEL POWERTRENCH<SUP>®</SUP> MOSFET 40V, 100A, 1.5MΩ

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8-PQFN
Discrete Semiconductor Products

FDMS015N04B

LTB
ON Semiconductor

N-CHANNEL POWERTRENCH<SUP>®</SUP> MOSFET 40V, 100A, 1.5MΩ

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationFDMS015N04B
Current - Continuous Drain (Id) @ 25°C31.3 A, 100 A
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]118 nC
Input Capacitance (Ciss) (Max) @ Vds8725 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerTDFN
Power Dissipation (Max)2.5 W
Power Dissipation (Max)104 W
Rds On (Max) @ Id, Vgs1.5 mOhm
Supplier Device Package8-PQFN (5x6)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 3.67
10$ 2.41
100$ 1.69
500$ 1.38
1000$ 1.28
Digi-Reel® 1$ 3.67
10$ 2.41
100$ 1.69
500$ 1.38
1000$ 1.28
Tape & Reel (TR) 3000$ 1.25
NewarkEach (Supplied on Full Reel) 3000$ 1.50
6000$ 1.40
12000$ 1.30
18000$ 1.25
30000$ 1.23

Description

General part information

FDMS015N04B Series

This N-Channel MOSFET is produced using an advanced PowerTrench®process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.