Discrete Semiconductor Products

PEMD12,115

NRND

TRANS PREBIAS 1NPN 1PNP SOT666

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Discrete Semiconductor Products

NRND

TRANS PREBIAS 1NPN 1PNP SOT666

Technical Specifications

Parameters and characteristics for this part

Specification	PEMD12,115

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	1 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	80
Mounting Type	Surface Mount
Package / Case	SOT-666, SOT-563
Power - Max [Max]	300 mW
Resistor - Base (R1)	47 kOhms
Resistor - Emitter Base (R2)	47000 Ohms
Supplier Device Package	SOT-666
Transistor Type	1 NPN, 1 PNP
Vce Saturation (Max) @ Ib, Ic	150 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Vce Saturation (Max) @ Ib, Ic	Mounting Type	Current - Collector (Ic) (Max) [Max]	Power - Max [Max]	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max) [Max]	Transistor Type	Current - Collector Cutoff (Max) [Max]	Resistor - Emitter Base (R2)	Package / Case	Resistor - Base (R1)
Freescale Semiconductor - NXP PEMD12,315	80	150 mV	Surface Mount	100 mA	300 mW	SOT-666	50 V	1 NPN 1 PNP	1 µA	47000 Ohms	SOT-563 SOT-666	47 kOhms
Freescale Semiconductor - NXP PEMD12,115	80	150 mV	Surface Mount	100 mA	300 mW	SOT-666	50 V	1 NPN 1 PNP	1 µA	47000 Ohms	SOT-563 SOT-666	47 kOhms

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 300mW Surface Mount SOT-666

Technical documentation and resources