Specification	NVH4L095N065SC1

Current - Continuous Drain (Id) @ 25°C	31 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	18 V, 15 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	50 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	956 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-4
Power Dissipation (Max)	129 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	105 mOhm
Supplier Device Package	TO-247-4L
Technology	SiC (Silicon Carbide Junction Transistor)
Vgs(th) (Max) @ Id [Max]	4.3 V

NVH4L095N065SC1 Series

Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 70 mohm, 650V, M2, TO247−4L

Part	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Package / Case	FET Type	Vgs(th) (Max) @ Id [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Qualification	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Grade	Technology
ON Semiconductor NVH4L095N065SC1	650 V	-55 °C	175 ░C	Through Hole	TO-247-4	N-Channel	4.3 V	50 nC	TO-247-4L	956 pF	31 A	105 mOhm	AEC-Q101	15 V 18 V	129 W	Automotive	SiC (Silicon Carbide Junction Transistor)

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 10.73
		30	$ 8.68
		120	$ 8.17
		510	$ 7.41
		1020	$ 6.79
Newark	Each	1	$ 15.34
		10	$ 13.93
		25	$ 12.52
		50	$ 11.11
		100	$ 10.73
		250	$ 10.34
ON Semiconductor	N/A	1	$ 6.74

Description

General part information

NVH4L095N065SC1 Series

EliteSiC MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.