Discrete Semiconductor Products

SIHF9520S-GE3

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MOSFET P-CH 100V 6.8A D2PAK

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Discrete Semiconductor Products

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MOSFET P-CH 100V 6.8A D2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	SIHF9520S-GE3

Current - Continuous Drain (Id) @ 25°C	6.8 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	18 nC
Input Capacitance (Ciss) (Max) @ Vds	390 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	3.7 W, 60 W
Rds On (Max) @ Id, Vgs	600 mOhm
Supplier Device Package	TO-263 (D2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Vgs (Max)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Package / Case	Power Dissipation (Max)	Technology	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	FET Type	Drive Voltage (Max Rds On, Min Rds On)
Vishay General Semiconductor - Diodes Division SIHF9520S-GE3	20 V	Surface Mount	18 nC	100 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	3.7 W 60 W	MOSFET (Metal Oxide)	6.8 A	TO-263 (D2PAK)	390 pF	600 mOhm	-55 °C	175 ░C	4 V	P-Channel	10 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 100 V 6.8A (Tc) 3.7W (Ta), 60W (Tc) Surface Mount TO-263 (D2PAK)

Technical documentation and resources