Discrete Semiconductor Products

SIRA74DP-T1-GE3

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MOSFET N-CH 40V 24A/81.2A PPAK

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Discrete Semiconductor Products

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MOSFET N-CH 40V 24A/81.2A PPAK

Technical Specifications

Parameters and characteristics for this part

Specification	SIRA74DP-T1-GE3

Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	41 nC
Input Capacitance (Ciss) (Max) @ Vds	2000 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SO-8
Power Dissipation (Max)	4.1 W, 46.2 W
Rds On (Max) @ Id, Vgs	4.2 mOhm
Supplier Device Package	PowerPAK® SO-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	-16 V, 20 V
Vgs(th) (Max) @ Id	2.4 V

Part	Mounting Type	Technology	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Vgs (Max)	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs
Vishay General Semiconductor - Diodes Division SIRA74DP-T1-GE3	Surface Mount	MOSFET (Metal Oxide)	4.5 V 10 V	N-Channel	4.1 W 46.2 W	40 V	PowerPAK® SO-8	-55 °C	150 °C	PowerPAK® SO-8	-16 V 20 V	2.4 V	2000 pF	41 nC	4.2 mOhm

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General part information

N-Channel 40 V 24A (Ta), 81.2A (Tc) 4.1W (Ta), 46.2W (Tc) Surface Mount PowerPAK® SO-8

Technical documentation and resources

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