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Technical Specifications
Parameters and characteristics for this part
| Specification | QS5W1TR |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 3 A |
| Current - Collector Cutoff (Max) [Max] | 1 µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 |
| Frequency - Transition | 270 MHz |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | SOT-23-5 Thin, TSOT-23-5 |
| Power - Max [Max] | 1.25 W |
| Supplier Device Package | TSMT5 |
| Transistor Type | 2 NPN (Dual) Common Emitter |
| Vce Saturation (Max) @ Ib, Ic | 400 mV |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 30 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 2990 | $ 1.10 | |
Description
General part information
QS5W1 Series
Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillators, driver ICs and so forth.
Documents
Technical documentation and resources