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Discrete Semiconductor Products

FCU850N80Z

Obsolete
ON Semiconductor

POWER MOSFET, N-CHANNEL, SUPERFET<SUP>®</SUP> II, 800 V, 6 A, 850 MΩ, IPAK

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I-PAK
Discrete Semiconductor Products

FCU850N80Z

Obsolete
ON Semiconductor

POWER MOSFET, N-CHANNEL, SUPERFET<SUP>®</SUP> II, 800 V, 6 A, 850 MΩ, IPAK

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationFCU850N80Z
Current - Continuous Drain (Id) @ 25°C6 A
Drain to Source Voltage (Vdss)800 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs29 nC
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseIPAK, TO-251-3 Short Leads, TO-251AA
Power Dissipation (Max)75 W
Rds On (Max) @ Id, Vgs850 mOhm
Supplier Device PackageIPAK
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id [Max]4.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 256$ 1.18
256$ 1.18

Description

General part information

FCU850N80Z Series

SuperFET®II MOSFET is a brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. In addition, internal gate-source ESD diode allows to withstand over 2kV HBM surge stress.Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as Audio, Laptop adapter, Lighting, ATX power and industrial power applications.

Documents

Technical documentation and resources