Discrete Semiconductor Products

BUK9K45-100E,115

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MOSFET 2N-CH 100V 21A LFPAK56D

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Discrete Semiconductor Products

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MOSFET 2N-CH 100V 21A LFPAK56D

Technical Specifications

Parameters and characteristics for this part

Specification	BUK9K45-100E,115

Configuration	2 N-Channel (Dual)
Drain to Source Voltage (Vdss)	100 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	33.5 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	2152 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-LFPAK56, SOT-1205
Power - Max [Max]	53 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	42 mOhm
Supplier Device Package	LFPAK56D
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.1 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	Power - Max [Max]	Configuration	Input Capacitance (Ciss) (Max) @ Vds	Qualification	Grade	Package / Case	Rds On (Max) @ Id, Vgs	Technology	Drain to Source Voltage (Vdss)	Supplier Device Package	Vgs(th) (Max) @ Id	Mounting Type	FET Feature
Freescale Semiconductor - NXP BUK9K45-100E,115	-55 °C	175 ░C	33.5 nC	53 W	2 N-Channel (Dual)	2152 pF	AEC-Q101	Automotive	8-LFPAK56 SOT-1205	42 mOhm	MOSFET (Metal Oxide)	100 V	LFPAK56D	2.1 V	Surface Mount	Logic Level Gate

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General part information

Mosfet Array 100V 21A 53W Surface Mount LFPAK56D

Technical documentation and resources