Specification	RHRP30120-F102

Current - Average Rectified (Io)	30 A
Current - Reverse Leakage @ Vr	250 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-65 C
Package / Case	TO-220-2
Reverse Recovery Time (trr)	85 ns
Speed	200 mA, 500 ns
Supplier Device Package	TO-220-2
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If	3.2 V

RHRP30120 Series

30A, 1200V, Hyperfast Diode

Part	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If	Mounting Type	Current - Average Rectified (Io)	Voltage - DC Reverse (Vr) (Max) [Max]	Technology	Supplier Device Package	Package / Case	Speed	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Reverse Recovery Time (trr)
ON Semiconductor RHRP30120	250 µA	3.2 V	Through Hole	30 A	1.2 kV	Standard	TO-220-2L	TO-220-2	200 mA 500 ns	175 ░C	-65 C	85 ns
ON Semiconductor RHRP30120-F102	250 µA	3.2 V	Through Hole	30 A	1.2 kV	Standard	TO-220-2	TO-220-2	200 mA 500 ns	175 ░C	-65 C	85 ns

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

RHRP30120 Series

The RHRP30120 is a hyperfast diode with soft recovery characteristics. It has the half recovery time of ultrafast diodes and is silicon nitride passivated ionimplanted epitaxial planar construction. These devices are intended to be used as freewheeling/ clamping diodes and diodes in a variety of switching power supplies and other power switching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors.