Integrated Circuits (ICs)

MT28FW02GBBA1HPC-0AAT

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FLASH MEMORY, SLC NOR, 2GBIT, 128M X 16BIT, PARALLEL, LBGA, 64 PINS

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Integrated Circuits (ICs)

Active

FLASH MEMORY, SLC NOR, 2GBIT, 128M X 16BIT, PARALLEL, LBGA, 64 PINS

Technical Specifications

Parameters and characteristics for this part

Specification	MT28FW02GBBA1HPC-0AAT

Access Time	105 ns
Grade	Automotive
Memory Format	FLASH
Memory Interface	Parallel
Memory Organization	128M x 16
Memory Size	2 Gbit
Memory Type	Non-Volatile
Mounting Type	Surface Mount
Operating Temperature [Max]	105 °C
Operating Temperature [Min]	-40 °C
Package / Case	64-LBGA
Qualification	AEC-Q100
Supplier Device Package	64-LBGA (11x13)
Technology	FLASH - NOR
Voltage - Supply [Max]	3.6 V
Voltage - Supply [Min]	1.7 V
Write Cycle Time - Word, Page [custom]	60 ns
Write Cycle Time - Word, Page [custom]	60 ns

Part	Operating Temperature [Min]	Operating Temperature [Max]	Memory Size	Voltage - Supply [Min]	Voltage - Supply [Max]	Access Time	Mounting Type	Grade	Package / Case	Qualification	Memory Type	Memory Organization	Memory Interface	Memory Format	Write Cycle Time - Word, Page [custom]	Write Cycle Time - Word, Page [custom]	Technology	Supplier Device Package
Micron Technology Inc. MT28FW02GBBA1LPC-0AAT	-40 °C	105 °C	2 Gbit	1.7 V	3.6 V	105 ns	Surface Mount	Automotive	64-LBGA	AEC-Q100	Non-Volatile	128M x 16	Parallel	FLASH	60 ns	60 ns	FLASH - NOR	64-LBGA (11x13)
Micron Technology Inc. MT28FW02GBBA1HPC-0AAT	-40 °C	105 °C	2 Gbit	1.7 V	3.6 V	105 ns	Surface Mount	Automotive	64-LBGA	AEC-Q100	Non-Volatile	128M x 16	Parallel	FLASH	60 ns	60 ns	FLASH - NOR	64-LBGA (11x13)
Micron Technology Inc. MT28FW02GBBA1HPC-0AAT TR	-40 °C	105 °C	2 Gbit	1.7 V	3.6 V	105 ns	Surface Mount	Automotive	64-LBGA	AEC-Q100	Non-Volatile	128M x 16	Parallel	FLASH	60 ns	60 ns	FLASH - NOR	64-LBGA (11x13)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Voltage range from 2.7 to 3.6V core, 1.7 to 3.6V I/O

2Gb density, dual die stack, x16 configuration, high lock block structure

2Gb stacked device (two 1Gb die), single-level cell (SLC) process technology

Technical documentation and resources