Discrete Semiconductor Products

PMEG6010AESB315

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RECTIFIER DIODE, SCHOTTKY

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Discrete Semiconductor Products

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RECTIFIER DIODE, SCHOTTKY

Technical Specifications

Parameters and characteristics for this part

Specification	PMEG6010AESB315

Capacitance @ Vr, F	20 pF
Current - Average Rectified (Io)	1 A
Current - Reverse Leakage @ Vr	650 µA
Mounting Type	Surface Mount
Operating Temperature - Junction	150 ¯C
Package / Case	2-XDFN
Reverse Recovery Time (trr)	2.4 ns
Speed	200 mA, 500 ns
Supplier Device Package	DSN1006-2
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	60 V
Voltage - Forward (Vf) (Max) @ If	625 mV

Part	Voltage - DC Reverse (Vr) (Max) [Max]	Supplier Device Package	Speed	Technology	Current - Average Rectified (Io)	Mounting Type	Current - Reverse Leakage @ Vr	Reverse Recovery Time (trr)	Capacitance @ Vr, F	Operating Temperature - Junction	Voltage - Forward (Vf) (Max) @ If	Package / Case
Freescale Semiconductor - NXP PMEG6010AESB315	60 V	DSN1006-2	200 mA 500 ns	Schottky	1 A	Surface Mount	650 µA	2.4 ns	20 pF	150 ¯C	625 mV	2-XDFN

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 60 V 1A Surface Mount DSN1006-2

Technical documentation and resources