Discrete Semiconductor Products

NTMFS6H852NT1G

Active

POWER MOSFET, SINGLE N-CHANNEL, 80V, 40A, 14.2MΩ

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

POWER MOSFET, SINGLE N-CHANNEL, 80V, 40A, 14.2MΩ

Technical Specifications

Parameters and characteristics for this part

Specification	NTMFS6H852NT1G

Current - Continuous Drain (Id) @ 25°C	40 A, 10 A
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	13 nC
Input Capacitance (Ciss) (Max) @ Vds	760 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN, 5 Leads
Power Dissipation (Max)	54 W, 3.6 W
Rds On (Max) @ Id, Vgs	14.2 mOhm
Supplier Device Package	5-DFN (5x6)
Supplier Device Package	8-SOFL
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Power MOSFET, Single N-Channel, 80V, 40A, 14.2mΩ

Part	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Supplier Device Package	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Mounting Type	Rds On (Max) @ Id, Vgs	Vgs (Max)	Package / Case	Technology
ON Semiconductor NTMFS6H852NT1G	N-Channel	6 V 10 V	10 A 40 A	-55 °C	175 ░C	13 nC	3.6 W 54 W	4 V	5-DFN (5x6)	8-SOFL	760 pF	80 V	Surface Mount	14.2 mOhm	20 V	8-PowerTDFN 5 Leads	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Industrial Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance.