Discrete Semiconductor Products
RBQ20NS45ATL
ActiveRohm Semiconductor
LOW IR, 45V, 20A, TO-263S (D2PAK), SCHOTTKY BARRIER DIODE
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Discrete Semiconductor Products
RBQ20NS45ATL
ActiveRohm Semiconductor
LOW IR, 45V, 20A, TO-263S (D2PAK), SCHOTTKY BARRIER DIODE
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | RBQ20NS45ATL |
|---|---|
| Current - Average Rectified (Io) (per Diode) | 20 A |
| Current - Reverse Leakage @ Vr | 140 µA |
| Diode Configuration | 1 Pair Common Cathode |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction [Max] | 150 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB |
| Speed | 500 ns, 200 mA |
| Supplier Device Package | LPDS |
| Technology | Schottky |
| Voltage - DC Reverse (Vr) (Max) [Max] | 45 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
RBQ20NS45A Series
ROHM's schottky barrier diodes are low VF, low IR and high ESD resistant, suitable for phone and various portable electronics.
Documents
Technical documentation and resources