onsemi-2N6520RLRAG GP BJT Trans GP BJT PNP 350V 0.5A 625mW 3-Pin TO-92 T/R

Discrete Semiconductor Products

PN2222ARLRAG

Obsolete

ON Semiconductor

TRANS GP BJT NPN 40V 0.6A 625MW 3-PIN TO-92 T/R

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsDatasheet Datasheet

Discrete Semiconductor Products

PN2222ARLRAG

Obsolete

ON Semiconductor

TRANS GP BJT NPN 40V 0.6A 625MW 3-PIN TO-92 T/R

Deep-Dive with AI

DocumentsDatasheet Datasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	PN2222ARLRAG

Current - Collector (Ic) (Max) [Max]	600 mA
Current - Collector Cutoff (Max) [Max]	0.01 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	100
Frequency - Transition	300 MHz
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-92-3 Long Body, Formed Leads, TO-226-3
Power - Max [Max]	625 mW
Supplier Device Package	TO-92
Supplier Device Package	TO-226
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	1 V
Voltage - Collector Emitter Breakdown (Max) [Max]	40 V

PN2222A%20(LEGACY%20FAIRCHILD) Series

General Purpose Transistor

Part	Voltage - Collector Emitter Breakdown (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Power - Max [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Mounting Type	Package / Case	Current - Collector (Ic) (Max) [Max]	Current - Collector Cutoff (Max) [Max]	Transistor Type	Vce Saturation (Max) @ Ib, Ic	Supplier Device Package	Supplier Device Package	Frequency - Transition	Operating Temperature
ON Semiconductor PN2222	30 V	-55 °C	150 °C	625 mW	100	Through Hole	TO-226-3 TO-92-3 Long Body	600 mA	0.01 µA	NPN	1.6 V	TO-92	TO-226	250 MHz
ON Semiconductor PN2222TF	30 V			625 mW	100	Through Hole	TO-226-3 TO-92-3	600 mA	0.01 µA	NPN	1 V	TO-92-3		300 MHz	150 °C
ON Semiconductor PN2222ARLRAG	40 V	-55 °C	150 °C	625 mW	100	Through Hole	Formed Leads TO-226-3 TO-92-3 Long Body	600 mA	0.01 µA	NPN	1 V	TO-92	TO-226	300 MHz
ON Semiconductor PN2222TFR	30 V			625 mW	100	Through Hole	TO-226-3 TO-92-3	600 mA	0.01 µA	NPN	1 V	TO-92-3		300 MHz	150 °C
ON Semiconductor PN2222TF	30 V			625 mW	100	Through Hole	TO-226-3 TO-92-3	600 mA	0.01 µA	NPN	1 V	TO-92-3		300 MHz	150 °C
ON Semiconductor PN2222ARLRMG	40 V	-55 °C	150 °C	625 mW	100	Through Hole	Formed Leads TO-226-3 TO-92-3 Long Body	600 mA	0.01 µA	NPN	1 V	TO-92	TO-226	300 MHz
ON Semiconductor PN2222ARLRP	40 V	-55 °C	150 °C	625 mW	100	Through Hole	Formed Leads TO-226-3 TO-92-3 Long Body	600 mA	0.01 µA	NPN	1 V	TO-92	TO-226	300 MHz
ON Semiconductor PN2222A_J05Z	40 V			625 mW	100	Through Hole	TO-226-3 TO-92-3	1 A	0.01 µA	NPN	1 V	TO-92-3		300 MHz	150 °C
ON Semiconductor PN2222ATF	40 V	-55 °C	150 °C	625 mW	100	Through Hole	TO-226-3 TO-92-3	1 A	0.01 µA	NPN	1 V	TO-92-3		300 MHz
ON Semiconductor PN2222ABU	40 V	-55 °C	150 °C	625 mW	100	Through Hole	TO-226-3 TO-92-3	1 A	0.01 µA	NPN	1 V	TO-92-3		300 MHz

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

PN2222A%20(LEGACY%20FAIRCHILD) Series

The NPN Bipolar Transistor is designed for use in linear and switching applications. The device is housed in the TO-92 package, which is designed for medium power applications.Replacement Active Part Number:PN2222A

Documents

Technical documentation and resources