Specification	FZT649

Current - Collector (Ic) (Max) [Max]	3 A
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	100
Frequency - Transition	150 MHz
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-261AA, TO-261-4
Power - Max [Max]	2 W
Supplier Device Package	SOT-223-4
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	600 mV
Voltage - Collector Emitter Breakdown (Max)	25 V

FZT649 Series

NPN Low Saturation Transistor

Part	Current - Collector Cutoff (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Vce Saturation (Max) @ Ib, Ic	Power - Max [Max]	Mounting Type	Current - Collector (Ic) (Max) [Max]	Frequency - Transition	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max)	Transistor Type
ON Semiconductor FZT649	100 nA	100	TO-261-4 TO-261AA	-55 °C	150 °C	600 mV	2 W	Surface Mount	3 A	150 MHz	SOT-223-4	25 V	NPN

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

These devices are designed with high current gain and low saturation voltage with collector currents up to 3 A continuous.

Technical documentation and resources