Discrete Semiconductor Products
R6061YNZ4C13
ActiveRohm Semiconductor
MOSFET, N-CH, 600V, 61A, TO-247 ROHS COMPLIANT: YES
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Discrete Semiconductor Products
R6061YNZ4C13
ActiveRohm Semiconductor
MOSFET, N-CH, 600V, 61A, TO-247 ROHS COMPLIANT: YES
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | R6061YNZ4C13 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 61 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 12 V, 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 76 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 3700 pF |
| Mounting Type | Through Hole |
| Operating Temperature | 150 °C |
| Package / Case | TO-247-3 |
| Power Dissipation (Max) [Max] | 568 W |
| Rds On (Max) @ Id, Vgs | 60 mOhm |
| Supplier Device Package | TO-247 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) @ Id | 6 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
R6061YNZ4 Series
R6061YNZ4 is a power MOSFET with low on - resistance, suitable for switching.
Documents
Technical documentation and resources