Specification	NTD4815N-35G

Current - Continuous Drain (Id) @ 25°C	6.9 A
Current - Continuous Drain (Id) @ 25°C	35 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	4.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	11.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	14.1 nC
Input Capacitance (Ciss) (Max) @ Vds	770 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-251-3 Stub Leads, IPAK
Power Dissipation (Max)	1.26 W, 32.6 W
Rds On (Max) @ Id, Vgs	15 mOhm
Supplier Device Package	IPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

NTD4815N Series

Single N-Channel Power MOSFET 30V 35A 15mΩ

Part	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Vgs(th) (Max) @ Id	FET Type	Mounting Type	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Package / Case	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Technology	Gate Charge (Qg) (Max) @ Vgs
ON Semiconductor NTD4815N-35G	30 V	1.26 W 32.6 W	2.5 V	N-Channel	Through Hole	IPAK	-55 °C	175 ░C	6.9 A	35 A	15 mOhm	TO-251-3 Stub Leads IPAK	4.5 V	11.5 V	770 pF	20 V	MOSFET (Metal Oxide)	14.1 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Power MOSFET 30 V, 35 A, Single N-Channel, DPAK/IPAK

Technical documentation and resources