Discrete Semiconductor Products

FQPF9N50CT

Obsolete

ON Semiconductor

MOSFET N-CH 500V 9A TO220F

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Discrete Semiconductor Products

FQPF9N50CT

Obsolete

ON Semiconductor

MOSFET N-CH 500V 9A TO220F

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DocumentsDatasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	FQPF9N50CT

Current - Continuous Drain (Id) @ 25°C	9 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	35 nC
Input Capacitance (Ciss) (Max) @ Vds	1030 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max)	44 W
Rds On (Max) @ Id, Vgs [Max]	800 mOhm
Supplier Device Package	TO-220F-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

FQPF9P25YDTU Series

Power MOSFET, N-Channel, QFET<sup>®</sup>, FRFET<sup>®</sup>, 500 V, 9 A, 800 mΩ, TO-220F

Part	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	Package / Case	Drain to Source Voltage (Vdss)	FET Type	Technology	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Mounting Type	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs [x]	Rds On (Max) @ Id, Vgs [Max]
ON Semiconductor FQPF9N08	7.7 nC	23 W	TO-220-3 Full Pack	80 V	N-Channel	MOSFET (Metal Oxide)	25 V	10 V	250 pF	4 V	Through Hole	210 mOhm	-55 °C	175 ░C	7 A	TO-220F-3
ON Semiconductor FQPF9N50CF		44 W	TO-220-3 Full Pack	500 V	N-Channel	MOSFET (Metal Oxide)	30 V	10 V	1030 pF	4 V	Through Hole	850 mOhm	-55 °C	150 °C	9 A	TO-220F-3	35 nC
ON Semiconductor FQPF9N30		42 W	TO-220-3 Full Pack	300 V	N-Channel	MOSFET (Metal Oxide)	30 V	10 V	740 pF	5 V	Through Hole	450 mOhm	-55 °C	150 °C	6 A	TO-220F-3	22 nC
ON Semiconductor FQPF9N50	36 nC		TO-220-3 Full Pack	500 V	N-Channel	MOSFET (Metal Oxide)	30 V	10 V		5 V	Through Hole	730 mOhm	-55 °C	150 °C	5.3 A	TO-220F-3		50 W	1450 pF
ON Semiconductor FQPF9N25		45 W	TO-220-3 Full Pack	250 V	N-Channel	MOSFET (Metal Oxide)	30 V	10 V	700 pF	5 V	Through Hole	420 mOhm	-55 °C	150 °C	6.7 A	TO-220F-3				20 nC
ON Semiconductor FQPF90N10V2		83 W	TO-220-3 Full Pack	100 V	N-Channel	MOSFET (Metal Oxide)	30 V	10 V	6150 pF	4 V	Through Hole	10 mOhm	-55 °C	175 ░C	90 A	TO-220F-3	191 nC
ON Semiconductor FQPF9N50CT		44 W	TO-220-3 Full Pack	500 V	N-Channel	MOSFET (Metal Oxide)	30 V	10 V	1030 pF	4 V	Through Hole		-55 °C	150 °C	9 A	TO-220F-3	35 nC				800 mOhm
ON Semiconductor FQPF9N30		42 W	TO-220-3 Full Pack	300 V	N-Channel	MOSFET (Metal Oxide)	30 V	10 V	740 pF	5 V	Through Hole	450 mOhm	-55 °C	150 °C	6 A	TO-220F-3	22 nC
ON Semiconductor FQPF90N10V2		83 W	TO-220-3 Full Pack	100 V	N-Channel	MOSFET (Metal Oxide)	30 V	10 V	6150 pF	4 V	Through Hole	10 mOhm	-55 °C	175 ░C	90 A	TO-220F-3	191 nC
ON Semiconductor FQPF9N50CF		44 W	TO-220-3 Full Pack	500 V	N-Channel	MOSFET (Metal Oxide)	30 V	10 V	1030 pF	4 V	Through Hole	850 mOhm	-55 °C	150 °C	9 A	TO-220F-3	35 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	316	$ 0.95
		316	$ 0.95

Description

General part information

FQPF9P25YDTU Series

This P-Channel enhancement mode power MOSFET is produced using ON Semiconductor Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.

Documents

Technical documentation and resources