IXTQ86N20T
ActiveDISCMSFT NCHTRENCHGATE-GEN1 TO-3P (3)/ TUBE
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IXTQ86N20T
ActiveDISCMSFT NCHTRENCHGATE-GEN1 TO-3P (3)/ TUBE
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | IXTQ86N20T |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 86 A |
| Drain to Source Voltage (Vdss) | 200 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 90 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 4500 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SC-65-3, TO-3P-3 |
| Power Dissipation (Max) | 480 W |
| Rds On (Max) @ Id, Vgs [Max] | 29 mOhm |
| Supplier Device Package | TO-3P |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
IXTQ86N20T Series
Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low RDS(on), thus guaranteeing very low power Dissipation. This, combined with wide ranging operating junction temperature from -40 °C to 175 °C make them suitable candidates for automobile applications and other similar demanding applications in harsh environments. Advantages: Easy to Mount Space Savings High power density
Documents
Technical documentation and resources