Discrete Semiconductor Products

KSB1149OSTU

Obsolete

TRANS PNP DARL 100V 3A TO126-3

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Discrete Semiconductor Products

Obsolete

TRANS PNP DARL 100V 3A TO126-3

Technical Specifications

Parameters and characteristics for this part

Specification	KSB1149OSTU

Current - Collector (Ic) (Max) [Max]	3 A
Current - Collector Cutoff (Max) [Max]	10 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	2000
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-225AA, TO-126-3
Power - Max	1.3 W
Supplier Device Package	TO-126-3
Transistor Type	PNP - Darlington
Vce Saturation (Max) @ Ib, Ic	1.2 V
Voltage - Collector Emitter Breakdown (Max) [Max]	100 V

Part	Supplier Device Package	Mounting Type	Vce Saturation (Max) @ Ib, Ic	Current - Collector (Ic) (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Power - Max	Frequency - Transition	Voltage - Collector Emitter Breakdown (Max)	Current - Collector Cutoff (Max) [Max]	Operating Temperature	Package / Case	Transistor Type	Current - Collector (Ic) (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce	Voltage - Collector Emitter Breakdown (Max) [Max]	Power - Max [Max]
ON Semiconductor KSB1121TTF	SOT-89-3	Surface Mount	600 mV	2 A	200	1.3 W	150 MHz	25 V	100 nA	150 °C	TO-243AA	PNP
ON Semiconductor KSB1151YSTSTU	TO-126-3	Through Hole	300 mV			1.3 W		60 V	10 µA	150 °C	TO-126-3 TO-225AA	PNP	5 A	160 hFE
ON Semiconductor KSB1149OSTU	TO-126-3	Through Hole	1.2 V	3 A	2000	1.3 W			10 µA	150 °C	TO-126-3 TO-225AA	PNP - Darlington			100 V
ON Semiconductor KSB1116ALBU	TO-92-3	Through Hole	300 mV	1 A	300		120 MHz	60 V	100 nA	150 °C	TO-226-3 TO-92-3	PNP				750 mW
ON Semiconductor KSB1149YS	TO-126-3	Through Hole	1.2 V	3 A	4000	1.3 W			10 µA	150 °C	TO-126-3 TO-225AA	PNP - Darlington			100 V
ON Semiconductor KSB1151YSTSSTU	TO-126-3	Through Hole	300 mV			1.3 W		60 V	10 µA	150 °C	TO-126-3 TO-225AA	PNP	5 A	160 hFE

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Bipolar (BJT) Transistor PNP - Darlington 100 V 3 A 1.3 W Through Hole TO-126-3

Technical documentation and resources