Discrete Semiconductor Products

FQP3N25

Obsolete

ON Semiconductor

MOSFET N-CH 250V 2.8A TO220-3

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Discrete Semiconductor Products

FQP3N25

Obsolete

ON Semiconductor

MOSFET N-CH 250V 2.8A TO220-3

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DocumentsDatasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	FQP3N25

Current - Continuous Drain (Id) @ 25°C	2.8 A
Drain to Source Voltage (Vdss)	250 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	5.2 nC
Input Capacitance (Ciss) (Max) @ Vds	170 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	45 W
Rds On (Max) @ Id, Vgs	2.2 Ohm
Supplier Device Package	TO-220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

FQP3N60C Series

Power MOSFET, N-Channel, QFET<sup>®</sup>, 800 V, 3.0 A, 4.8 Ω, TO-220

Part	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Vgs (Max)	Mounting Type	Package / Case	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Supplier Device Package	FET Type	Technology	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max) [Max]
ON Semiconductor FQP3N90	4.25 Ohm	-55 °C	150 °C	900 V	30 V	Through Hole	TO-220-3	5 V	130 W	TO-220-3	N-Channel	MOSFET (Metal Oxide)	910 pF	10 V	3.6 A	26 nC
ON Semiconductor FQP32N12V2	50 mOhm	-55 °C	175 ░C	120 V	30 V	Through Hole	TO-220-3	4 V	150 W	TO-220-3	N-Channel	MOSFET (Metal Oxide)	1860 pF	10 V	32 A		53 nC
ON Semiconductor FQP3N60	3.6 Ohm	-55 °C	150 °C	600 V	30 V	Through Hole	TO-220-3	5 V	75 W	TO-220-3	N-Channel	MOSFET (Metal Oxide)		10 V	3 A	13 nC		450 pF
ON Semiconductor FQP32N12V2	50 mOhm	-55 °C	175 ░C	120 V	30 V	Through Hole	TO-220-3	4 V	150 W	TO-220-3	N-Channel	MOSFET (Metal Oxide)	1860 pF	10 V	32 A		53 nC
ON Semiconductor FQP3N60C	3.4 Ohm	-55 °C	150 °C	600 V	30 V	Through Hole	TO-220-3	4 V	75 W	TO-220-3	N-Channel	MOSFET (Metal Oxide)	565 pF	10 V	3 A		14 nC
ON Semiconductor FQP3N80C	4.8 Ohm	-55 °C	150 °C	800 V	30 V	Through Hole	TO-220-3	5 V	107 W	TO-220-3	N-Channel	MOSFET (Metal Oxide)	705 pF	10 V	3 A	16.5 nC
ON Semiconductor FQP3N50C-F080	2.5 Ohm	-55 °C	150 °C	500 V	30 V	Through Hole	TO-220-3	4 V		TO-220-3	N-Channel	MOSFET (Metal Oxide)		10 V	1.8 A	13 nC		365 pF	62 W
ON Semiconductor FQP3P50	4.9 Ohm	-55 °C	150 °C	500 V	30 V	Through Hole	TO-220-3	5 V		TO-220-3	P-Channel	MOSFET (Metal Oxide)		10 V	2.7 A		23 nC		85 W
ON Semiconductor FQP3N40	3.4 Ohm	-55 °C	150 °C	400 V	30 V	Through Hole	TO-220-3	5 V		TO-220-3	N-Channel	MOSFET (Metal Oxide)	230 pF	10 V	2.5 A		7.5 nC		55 W
ON Semiconductor FQP3N25	2.2 Ohm	-55 °C	150 °C	250 V	30 V	Through Hole	TO-220-3	5 V	45 W	TO-220-3	N-Channel	MOSFET (Metal Oxide)	170 pF	10 V	2.8 A		5.2 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1025	$ 0.29
		1025	$ 0.29

Description

General part information

FQP3N60C Series

These N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

Documents

Technical documentation and resources