Discrete Semiconductor Products

BD17516STU

Obsolete

TRANSISTOR,BJT,NPN,45V V(BR)CEO,3A I(C),TO-126 ROHS COMPLIANT: YES

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Discrete Semiconductor Products

Obsolete

TRANSISTOR,BJT,NPN,45V V(BR)CEO,3A I(C),TO-126 ROHS COMPLIANT: YES

Technical Specifications

Parameters and characteristics for this part

Specification	BD17516STU

Current - Collector (Ic) (Max) [Max]	3 A
Current - Collector Cutoff (Max) [Max]	100 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	100
Frequency - Transition	3 MHz
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-225AA, TO-126-3
Power - Max [Max]	30 W
Supplier Device Package	TO-126-3
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	800 mV
Voltage - Collector Emitter Breakdown (Max)	45 V

NPN Epitaxial Silicon Transistor

Part	Current - Collector (Ic) (Max) [Max]	Transistor Type	Current - Collector Cutoff (Max) [Max]	Operating Temperature	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Power - Max [Max]	Supplier Device Package	Vce Saturation (Max) @ Ib, Ic	Mounting Type	Package / Case	Voltage - Collector Emitter Breakdown (Max)	Frequency - Transition
ON Semiconductor BD17516STU	3 A	NPN	100 µA	150 °C	100	30 W	TO-126-3	800 mV	Through Hole	TO-126-3 TO-225AA	45 V	3 MHz

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General part information

NPN Epitaxial Silicon Transistor

Technical documentation and resources