Discrete Semiconductor Products

KSC5042MSTU

Obsolete

TRANS NPN 900V 0.1A TO126-3

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

TRANS NPN 900V 0.1A TO126-3

Technical Specifications

Parameters and characteristics for this part

Specification	KSC5042MSTU

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	10 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	30
Mounting Type	Through Hole
Package / Case	TO-225AA, TO-126-3
Power - Max [Max]	6 W
Supplier Device Package	TO-126-3
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	5 V
Voltage - Collector Emitter Breakdown (Max)	900 V

Part	Transistor Type	Mounting Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector Cutoff (Max) [Max]	Voltage - Collector Emitter Breakdown (Max)	Supplier Device Package	Vce Saturation (Max) @ Ib, Ic	Current - Collector (Ic) (Max) [Max]	Power - Max [Max]	Package / Case	Operating Temperature
ON Semiconductor KSC5042MSTU	NPN	Through Hole	30	10 µA	900 V	TO-126-3	5 V	100 mA	6 W	TO-126-3 TO-225AA
ON Semiconductor KSC5042FYDTU	NPN	Through Hole	30	10 µA	900 V	TO-220F-3	5 V	100 mA	6 W	TO-220-3 Full Pack Formed Leads	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Bipolar (BJT) Transistor NPN 900 V 100 mA 6 W Through Hole TO-126-3

Technical documentation and resources

No documents available