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Discrete Semiconductor Products

IXFP130N10T

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Littelfuse/Commercial Vehicle Products

TRANS MOSFET N-CH 100V 130A 3-PIN(3+TAB) TO-220AB

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Discrete Semiconductor Products

IXFP130N10T

Active

Littelfuse/Commercial Vehicle Products

TRANS MOSFET N-CH 100V 130A 3-PIN(3+TAB) TO-220AB

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IXFP130N10T

Current - Continuous Drain (Id) @ 25°C	130 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	104 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	5080 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	360 W
Rds On (Max) @ Id, Vgs	9.1 mOhm
Supplier Device Package	TO-220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.5 V

IXFP130N10T2 Series

DiscMSFT NChTrenchGate-Gen1 TO-220AB/FP

Part	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	FET Type	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Technology	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Package / Case	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds
Littelfuse/Commercial Vehicle Products IXFP130N10T	10 V	Through Hole	-55 °C	175 ░C	104 nC	N-Channel	9.1 mOhm	4.5 V	360 W	100 V	MOSFET (Metal Oxide)	TO-220-3	130 A	TO-220-3	20 V	5080 pF
Littelfuse/Commercial Vehicle Products IXFP130N10T2	10 V	Through Hole	-55 °C	175 ░C		N-Channel	9.1 mOhm	4.5 V	360 W	100 V	MOSFET (Metal Oxide)	TO-220-3	130 A	TO-220-3	20 V		130 nC	6600 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	300	$ 2.88
Newark	Each	100	$ 2.99
		500	$ 2.72
		1000	$ 2.40
		2500	$ 2.23

Description

General part information

IXFP130N10T2 Series

These devices are offered with drain-to-source voltage ratings from 40V to 170V and provide high current capabilities of up to 600 Amperes (Tc=@25oC). The combined high current ratings of these devices and available compact package options provide designers the ability to control more power within a smaller footprint. Furthermore, these devices promote device consolidation through the reduction or elimination of multiple paralleled lower current rated MOSFET devices in high power switching applications. The resultant effect is a reduction in part count, as well as the number of required drive components, thus improving upon over-all system simplicity, reliability, and cost. Advantages: Eliminates multiple paralleled lower current rated MOSFET devices Provides the ability to control more power within a smaller footprint Improves overall system reliability and cost

Documents

Technical documentation and resources