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Discrete Semiconductor Products

NVC6S5A444NLZT1G

Obsolete
ON Semiconductor

POWER MOSFET, 60 V, 78 MΩ, 4.5 A, N-CHANNEL

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Discrete Semiconductor Products

NVC6S5A444NLZT1G

Obsolete
ON Semiconductor

POWER MOSFET, 60 V, 78 MΩ, 4.5 A, N-CHANNEL

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationNVC6S5A444NLZT1G
Current - Continuous Drain (Id) @ 25°C3.5 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]10 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds [Max]505 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseTSOT-23-6, SOT-23-6 Thin
Power Dissipation (Max) [Max]970 mW
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs78 mOhm
Supplier Device Package6-CPH
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2.6 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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Description

General part information

NVC6S5A444NLZ Series

Automotive Power MOSFET designed to minimize gate charge and low on resistance. AEC-Q101 qualified MOSFET and PPAP capable suitable for automotive applications.