Specification	CSD18542KTT

Current - Continuous Drain (Id) @ 25°C	200 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	57 nC
Input Capacitance (Ciss) (Max) @ Vds	5070 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-263AA, D2PAK (3 Leads + Tab), TO-263-4
Power Dissipation (Max) [Max]	250 W
Rds On (Max) @ Id, Vgs [Max]	4 mOhm
Supplier Device Package	TO-263 (DDPAK-3)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	2.2 V

CSD18542KTT Series

60-V, N channel NexFET™ power MOSFET, single D2PAK, 4 mOhm

Part	Technology	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id [Max]	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	FET Type	Vgs (Max)	Power Dissipation (Max) [Max]	Rds On (Max) @ Id, Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)
Texas Instruments CSD18542KTT	MOSFET (Metal Oxide)	60 V	57 nC	200 A	2.2 V	TO-263 (DDPAK-3)	5070 pF	Surface Mount	4.5 V 10 V	D2PAK (3 Leads + Tab) TO-263-4 TO-263AA	N-Channel	20 V	250 W	4 mOhm	-55 °C	175 ░C
Texas Instruments CSD18542KTTT	MOSFET (Metal Oxide)	60 V	57 nC		2.2 V	TO-263 (DDPAK-3)	5070 pF	Surface Mount	4.5 V 10 V	D2PAK (3 Leads + Tab) TO-263-4 TO-263AA	N-Channel	20 V		4 mOhm	-55 °C	175 ░C	250 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

This 60V, 3.3mΩ, D2PAK (TO-263) NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

Technical documentation and resources