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INFINEON IDYH80G200C5XKSA1
Discrete Semiconductor Products

NDSH30120CDN

Active
ON Semiconductor

SILICON CARBIDE SCHOTTKY DIODE, ELITESIC SERIES, DUAL COMMON CATHODE, 1.2 KV, 30 A, 64 NC, TO-247

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INFINEON IDYH80G200C5XKSA1
Discrete Semiconductor Products

NDSH30120CDN

Active
ON Semiconductor

SILICON CARBIDE SCHOTTKY DIODE, ELITESIC SERIES, DUAL COMMON CATHODE, 1.2 KV, 30 A, 64 NC, TO-247

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationNDSH30120CDN
Current - Average Rectified (Io) (per Diode)15 A
Current - Reverse Leakage @ Vr200 µA
Diode Configuration1 Pair Common Cathode
Mounting TypeThrough Hole
Operating Temperature - Junction [Max]175 ░C
Operating Temperature - Junction [Min]-55 C
Package / CaseTO-247-3
Reverse Recovery Time (trr)0 ns
SpeedNo Recovery Time
Supplier Device PackageTO-247-3
TechnologySiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]1.2 kV
Voltage - Forward (Vf) (Max) @ If1.75 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 11.08
10$ 7.75
25$ 6.89
100$ 5.93
250$ 5.47
NewarkEach 1$ 13.26
10$ 9.02
25$ 8.96
50$ 8.96
100$ 8.95
250$ 8.95
900$ 8.24
ON SemiconductorN/A 1$ 5.24

Description

General part information

NDSH30120CDN Series

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.

Documents

Technical documentation and resources