Discrete Semiconductor Products

NTMFD5C672NLT1G

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MOSFET, DUAL N-CH, 60V, 49A, DFN ROHS COMPLIANT: YES

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Discrete Semiconductor Products

Active

MOSFET, DUAL N-CH, 60V, 49A, DFN ROHS COMPLIANT: YES

Technical Specifications

Parameters and characteristics for this part

Specification	NTMFD5C672NLT1G

Configuration	2 N-Channel
Current - Continuous Drain (Id) @ 25°C	12 A, 49 A
Drain to Source Voltage (Vdss)	60 V
Gate Charge (Qg) (Max) @ Vgs	12.3 nC
Input Capacitance (Ciss) (Max) @ Vds	793 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power - Max	3.1 W, 45 W
Rds On (Max) @ Id, Vgs	11.9 mOhm
Supplier Device Package	8-DFN (5x6) Dual Flag (SO8FL-Dual)
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.2 V

Dual N-Channel Power MOSFET 60V, 49A, 11.9mΩ

Part	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Power - Max	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Package / Case	Technology	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Configuration
ON Semiconductor NTMFD5C672NLT1G	8-DFN (5x6) Dual Flag (SO8FL-Dual)	12 A 49 A	3.1 W 45 W	-55 °C	175 ░C	Surface Mount	8-PowerTDFN	MOSFET (Metal Oxide)	2.2 V	793 pF	60 V	12.3 nC	11.9 mOhm	2 N-Channel

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General part information

Industrial Power MOSFET in a 5x6 mm flat lead package designed for compact and efficient designs and including high thermal performance.

Technical documentation and resources