Discrete Semiconductor Products

MGSF1N02LT1

Obsolete

MOSFET N-CH 20V 750MA SOT23-3

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 20V 750MA SOT23-3

Technical Specifications

Parameters and characteristics for this part

Specification	MGSF1N02LT1

Current - Continuous Drain (Id) @ 25°C	750 mA
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	125 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)	400 mW
Rds On (Max) @ Id, Vgs	90 mOhm
Supplier Device Package	SOT-23-3 (TO-236)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.4 V

Part	Technology	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Vgs (Max)	Supplier Device Package	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Rds On (Max) @ Id, Vgs [Max]
ON Semiconductor MGSF1N02LT1	MOSFET (Metal Oxide)	400 mW	20 V	-55 °C	150 °C	90 mOhm	SC-59 SOT-23-3 TO-236-3	125 pF	Surface Mount	20 V	SOT-23-3 (TO-236)	2.4 V	750 mA	4.5 V 10 V	N-Channel
ON Semiconductor MGSF1N03LT3	MOSFET (Metal Oxide)	420 mW	30 V	-55 °C	150 °C		SC-59 SOT-23-3 TO-236-3	140 pF	Surface Mount	20 V	SOT-23-3 (TO-236)	2.4 V	1.6 A	4.5 V 10 V	N-Channel	100 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 20 V 750mA (Ta) 400mW (Ta) Surface Mount SOT-23-3 (TO-236)

Technical documentation and resources